RESISTIVITY OF SEMICONDUCTORS BY FOUR PROBE METHOD AT DIFFERENT TEMPERATURES AND DETERMINATION OF BAND-GAP
Description
The experiment consists of the following :
i) Four Probe Arrangement
(ii) Oven (upto 200ºC
(iii) Sample : Ge Crystal mounted
(iv) Thermometer (0-200ºC)
(v)Four Probe Setup
a) Constant Current power supply digital Accuracy : +0.25% of the reading +1 digit Load Regulation :
0.03% for no load to full load
(b)Electronic Millivoltmeter 200 mV Accuracy : + 0.1% of reading = 1 digit Impedence : 1 Mohm
nDisplay : 3½ digit, 7 segment LED (12.5mm) height with auto polarity and decimal indication
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