RESISTIVITY OF SEMICONDUCTORS BY FOUR PROBE METHOD AT DIFFERENT TEMPERATURES AND DETERMINATION OF BAND-GAP

Description

The experiment consists of the following :
i) Four Probe Arrangement
(ii) Oven (upto 200ºC
(iii) Sample : Ge Crystal mounted
(iv) Thermometer (0-200ºC)
(v)Four Probe Setup
a) Constant Current power supply digital Accuracy : +0.25% of the reading +1 digit Load Regulation :
0.03% for no load to full load
(b)Electronic Millivoltmeter 200 mV Accuracy : + 0.1% of reading = 1 digit Impedence : 1 Mohm
nDisplay : 3½ digit, 7 segment LED (12.5mm) height with auto polarity and decimal indication

Additional information

Reviews

There are no reviews yet.

Be the first to review “RESISTIVITY OF SEMICONDUCTORS BY FOUR PROBE METHOD AT DIFFERENT TEMPERATURES AND DETERMINATION OF BAND-GAP”

Your email address will not be published. Required fields are marked *